NE32500M-A
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-XUUC-N4
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)11 dB
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKA BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min4 V
- Moisture Sensitivity Level1
- Transistor Element MaterialGALLIUM ARSENIDE
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NE32500M-A