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NE3210S01-T1B

Renesas Electronics Corp.

Renesas Electronics Corp. NE3210S01-T1B
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.21.00.95
  • SB Code
    8541.21.00.80
  • JESD-30 Code
    X-PXMW-G4
  • Configuration
    SINGLE
  • JESD-609 Code
    e0
  • Package Shape
    UNSPECIFIED
  • Package Style
    MICROWAVE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    HETERO-JUNCTION
  • Operating Mode
    DEPLETION MODE
  • Case Connection
    SOURCE
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    UNSPECIFIED
  • Number of Elements
    1
  • Number of Terminals
    4
  • Power Gain-Min (Gp)
    12 dB
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    0.015 A
  • Highest Frequency Band
    KU BAND
  • Transistor Application
    AMPLIFIER
  • DS Breakdown Voltage-Min
    3 V
  • Operating Temperature-Max
    125 Cel
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    230
  • Power Dissipation Ambient-Max
    0.165 W
  • Time@Peak Reflow Temperature-Max (s)
    30

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NE3210S01-T1B