NE3210S01-T1B
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionRF JFET Transistors Super Lo Noise HJFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PRDB-G4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionRADIAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)12 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.015 A
- Highest Frequency BandX BAND
- DS Breakdown Voltage-Min3 V
- Transistor Element MaterialSILICON
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NE3210S01-T1B