NE321000
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.40
- SB Code8541.21.00.40
- JESD-30 CodeS-XUUC-N4
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)12 dB
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.015 A
- Highest Frequency BandKA BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min4 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max0.2 W
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NE321000
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NE321000