NE25139-T1 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NE25139-T1

Lifecycle status
Discontinued
Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
16 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.04 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.03 pF
DS Breakdown Voltage-Min
13 V
Operating Temperature-Max
125 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.2 W