NE24615
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-33
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-MBCY-W4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-33
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals4
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)30
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.25
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)20
- Power Dissipation Ambient-Max (W)5
- Collector-base Capacitance-Max (pF)2.5
- Transition Frequency-Nom (fT) (MHz)2800
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NE24615