NE24200
NEC Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N3
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureLOW NOISE, HIGH RELIABILITY
- Number of Elements2
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)10
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)4
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NE24200