NE21935 by ASI Semiconductor, Inc. | Sourcengine

ASI Semiconductor, Inc. NE21935

Lifecycle status
Active
Description
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.58
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.08
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
10
Power Dissipation Ambient-Max (W)
0.5
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
8000