NE1280400
NEC Corporation
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N5
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals5
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandK BAND
- Drain Current-Max (ID) (A)1.2
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)10
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NE1280400