NE1280100
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.3 A
- Highest Frequency BandK BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min5 V
- Transistor Element MaterialSILICON
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NE1280100