NE02135-85
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-PRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.07
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)12
- Transition Frequency-Nom (fT) (MHz)4500
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NE02135-85
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NE02135-85