NDU506AE by NATIONAL SEMICONDUCTOR CORP | Sourcengine

NATIONAL SEMICONDUCTOR CORP NDU506AE

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 19A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
19 A
DS Breakdown Voltage-Min
60 V
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
72 W
Drain-source On Resistance-Max
0.05 ohm