NDT454P/J23Z by NATIONAL SEMICONDUCTOR CORP | Sourcengine

NATIONAL SEMICONDUCTOR CORP NDT454P/J23Z

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
5.9 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
90 ns
DS Breakdown Voltage-Min
30 V
Turn-off Time-Max (toff)
220 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
3 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
1.1 W
Drain-source On Resistance-Max
0.05 ohm
Pulsed Drain Current-Max (IDM)
15 A