NDT2955/S62Z
NATIONAL SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-261
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)2.5 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)55 ns
- DS Breakdown Voltage-Min60 V
- Turn-off Time-Max (toff)60 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max1.1 W
- Drain-source On Resistance-Max0.3 ohm
- Pulsed Drain Current-Max (IDM)15 A
0 suppliers available to buy or to bid for NDT2955/S62Z
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
NDT2955/S62Z
Send an RFQ
NDT2955/S62Z