NDS8926 by NATIONAL SEMICONDUCTOR CORP | Sourcengine

NATIONAL SEMICONDUCTOR CORP NDS8926

Lifecycle status
Transferred
REACH
REACH compliant
Description
Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
5.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
2
Drain-source On Resistance-Max (ohm)
0.035