NDS352AP/L99Z by NATIONAL SEMICONDUCTOR CORP | Sourcengine

NATIONAL SEMICONDUCTOR CORP NDS352AP/L99Z

Lifecycle status
Discontinued
Description
Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
0.9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
0.46
Drain-source On Resistance-Max (ohm)
0.3