NDP605AL
NATIONAL SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)48 A
- DS Breakdown Voltage-Min50 V
- Operating Temperature-Max175 Cel
- Power Dissipation-Max (Abs)100 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max100 W
- Drain-source On Resistance-Max0.025 ohm
0 suppliers available to buy or to bid for NDP605AL
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
NDP605AL
Send an RFQ
NDP605AL