NDB608BL86Z
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 32A I(D), 80V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)32
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)80
- Pulsed Drain Current-Max (IDM) (A)128
- Drain-source On Resistance-Max (ohm)0.045
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NDB608BL86Z