NDB608BEL by NATIONAL SEMICONDUCTOR CORP | Sourcengine

NATIONAL SEMICONDUCTOR CORP NDB608BEL

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 32A I(D), 80V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
32 A
DS Breakdown Voltage-Min
80 V
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
100 W
Drain-source On Resistance-Max
0.045 ohm