NAND256W3A0AN6E
Micron Technology
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionFlash, 32MX8, 35ns, PDSO48
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Width (mm)12
- Length (mm)18.4
- Data PollingNO
- JESD-30 CodeR-PDSO-G48
- Memory Width8
- Package CodeTSSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Page Size (words)512
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization32MX8
- Number of Functions1
- Number of Terminals48
- Sector Size (words)16K
- Terminal Pitch (mm)0.5
- Access Time-Max (ns)35
- Number of Words Code32M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size2K
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.7
- Supply Voltage-Nom (V)3
- Number of Words (words)33554432
- Programming Voltage (V)3
- Standby Current-Max (A)5.0E-5
- Supply Current-Max (mA)20
- Package Equivalence CodeTSSOP48,.8,20
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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NAND256W3A0AN6E