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NAND04GW3B2DZL6E

Micron Technology

Micron Technology NAND04GW3B2DZL6E
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    SLC NAND TYPE
  • Page Size
    2K words
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    NO
  • Sector Size
    128K Words
  • Data Polling
    NO
  • Memory Width
    8
  • Organization
    512MX8
  • Package Code
    LGA
  • Package Style
    GRID ARRAY Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • Memory Density
    4294967296 bit
  • Memory IC Type
    FLASH
  • Access Time-Max
    20 ns
  • Number of Words
    536870912 words
  • Parallel/Serial
    PARALLEL
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    30 mA
  • Number of Terminals
    52
  • Standby Current-Max
    5.0E-5 Amp
  • Number of Words Code
    512M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Number of Sectors/Size
    4K
  • Package Equivalence Code
    LGA52(UNSPEC)
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -40 Cel

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NAND04GW3B2DZL6E