NAND01GW3B2BN6E by Micron Technology | Sourcengine

Micron Technology NAND01GW3B2BN6E

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Flash, 128MX8, 20ns, PDSO48
Category
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
SLC NAND TYPE
Width
12 mm
Length
18.4 mm
Page Size
2K words
Ready/Busy
YES
Technology
CMOS
Toggle Bit
NO
Sector Size
128K Words
Data Polling
NO
JESD-30 Code
R-PDSO-G48
Memory Width
8
Organization
128MX8
Package Code
TSSOP
JESD-609 Code
e4
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
1073741824 bit
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Terminal Pitch
0.5 mm
Access Time-Max
20 ns
Number of Words
134217728 words
Parallel/Serial
PARALLEL
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Seated Height-Max
1.2 mm
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Supply Current-Max
20 mA
Number of Functions
1
Number of Terminals
48
Programming Voltage
3 V
Standby Current-Max
5.0E-5 Amp
Number of Words Code
128M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Command User Interface
YES
Number of Sectors/Size
1K
Package Equivalence Code
TSSOP48,.8,20
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3 V
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30