Microsemi Corporation N42120M1EC1S
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Diode Type
    BRIDGE RECTIFIER DIODE
  • Configuration
    BRIDGE, 4 ELEMENTS
  • Number of Phases
    1
  • DLA Qualification
    Not Qualified
  • Number of Elements
    4
  • Diode Element Material
    SILICON
  • Breakdown Voltage-Min (V)
    1200
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Rep Pk Reverse Voltage-Max (V)
    1200
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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N42120M1EC1S
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N42120M1EC1S