MWT-PH5
IXYS Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N6
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals6
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)18
- Transistor Element MaterialGALLIUM ARSENIDE
- Operating Temperature-Max (Cel)150
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