MWT-PH4
IXYS Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.40
- SB Code8541.21.00.40
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N4
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKA BAND
- Power Gain-Min (Gp) (dB)10
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)6.5
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)0.72
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MWT-PH4