MWT-PH28F
MICROWAVE TECHNOLOGY INC
- Lifecycle statusContact Mfr
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Al/in Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)10.5 dB
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandK BAND
- DS Breakdown Voltage-Min8.5 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialAl/In GALLIUM ARSENIDE
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MWT-PH28F