MWT-H9
IXYS Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Highest Frequency BandK BAND
- Transistor Element MaterialGALLIUM ARSENIDE
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MWT-H9