MWT-H16-1
MICROWAVE TECHNOLOGY INC
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N15
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals15
- Power Gain-Min (Gp)10 dB
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKA BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.14 pF
- Transistor Element MaterialGALLIUM ARSENIDE
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MWT-H16-1
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MWT-H16-1