MWT-A7LN
MICROWAVE TECHNOLOGY INC
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)7 dB
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min7 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
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MWT-A7LN