MWT-1HG
IXYS Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)9
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)7
- Operating Temperature-Max (Cel)150
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MWT-1HG