MUBW10-12A6 by IXYS Corporation | Sourcengine

IXYS Corporation MUBW10-12A6

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X25
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e3
VCEsat-Max (V)
3.3
Case Connection
ISOLATED
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
FAST
Number of Elements
7
Number of Terminals
25
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
67
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
165
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
390
Collector Current-Max (IC) (A)
13
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200