MTW32N20E
Motorola,Inc.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-247AE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)180
- Drain Current-Max (ID) (A)32
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)810
- Pulsed Drain Current-Max (IDM) (A)128
- Drain-source On Resistance-Max (ohm)0.085
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