MTP10N40EWC
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- DS Breakdown Voltage-Min400 V
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max125 W
- Drain-source On Resistance-Max0.55 ohm
0 suppliers available to buy or to bid for MTP10N40EWC
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MTP10N40EWC
Send an RFQ
MTP10N40EWC