MTH8N60
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 8A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-218AC
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)8 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)230 ns
- Feedback Cap-Max (Crss)180 pF
- DS Breakdown Voltage-Min600 V
- Turn-off Time-Max (toff)630 ns
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max150 W
- Drain-source On Resistance-Max0.5 ohm
- Pulsed Drain Current-Max (IDM)41 A
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