MTH326 by Mitsubishi Electric Corp. | Sourcengine

Mitsubishi Electric Corp. MTH326

Lifecycle status
Discontinued
Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
EMITTER
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
25 A
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
185 W