MTD2955-1
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-251
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)12 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.3 ohm
- Pulsed Drain Current-Max (IDM)26 A
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MTD2955-1