MTB50N06EL
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)50 A
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)2.5 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.028 ohm
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MTB50N06EL