MTA4ATF51264HZ-3G2XX by Micron Technology | Sourcengine

Micron Technology MTA4ATF51264HZ-3G2XX

Lifecycle status
Active-Unconfirmed
RoHS
RoHS compliant
REACH
REACH compliant
Description
DDR4 DRAM Module, 512MX64, CMOS, PDMA260
Category
Semiconductors Memory ICs DRAMs DDR4 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
2.5
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
69.6
JESD-30 Code
R-PDMA-N260
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR4 DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
DUAL
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
260
Terminal Pitch (mm)
0.5
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
30.13
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
536870912
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
DIMM260,20
Clock Frequency-Max (MHz)
1600
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED