MT53E512M64D4HJ-046AUT:D
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionLPDDR4 DRAM, 512MX64, 3.5ns, CMOS, PBGA556
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)12.4
- Access ModeMULTI BANK PAGE BURST
- Length (mm)12.4
- JESD-30 CodeS-PBGA-B556
- Memory Width64
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureSELF REFRESH; IT ALSO REQUIRES 1.8V NOM
- Memory Organization512MX64
- Number of Functions1
- Number of Terminals556
- Terminal Pitch (mm)0.4
- Access Time-Max (ns)3.5
- Number of Words Code512M
- Memory Density (bits)34359738368
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.1
- Supply Voltage-Max (V)1.17
- Supply Voltage-Min (V)1.06
- Supply Voltage-Nom (V)1.1
- Number of Words (words)536870912
- Sequential Burst Length16,32
- Standby Current-Max (A)0.0036
- Supply Current-Max (mA)390
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA556,29X29,16
- Clock Frequency-Max (MHz)2133
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-40
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