MT53E384M32D2DS-053AIT:E
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionLPDDR4 DRAM, 384MX32, CMOS, PBGA200
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeMULTI BANK PAGE BURST
- Length (mm)14.5
- JESD-30 CodeR-PBGA-B200
- Memory Width32
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureSELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
- Memory Organization384MX32
- Number of Functions1
- Number of Terminals200
- Terminal Pitch (mm)0.8
- Number of Words Code384M
- Memory Density (bits)12884901888
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)0.8
- Supply Voltage-Max (V)1.17
- Supply Voltage-Min (V)1.06
- Supply Voltage-Nom (V)1.1
- Number of Words (words)402653184
- Sequential Burst Length16,32
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA200,12X20,32/25
- Clock Frequency-Max (MHz)1866
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)-40
- Screening Level / Reference StandardAEC-Q100
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