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MT53E2G32D4NQ-046WT:A

Micron Technology

Micron Technology MT53E2G32D4NQ-046WT:A
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.36
  • SB Code
    8542.32.00.23
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    10
  • Access Mode
    MULTI BANK PAGE BURST
  • Length (mm)
    14.5
  • JESD-30 Code
    R-PBGA-B200
  • Memory Width
    32
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    LPDDR4 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    8192
  • Number of Ports
    1
  • Terminal Finish
    Tin/Silver/Copper/Bismuth/Nickel (Sn/Ag/Cu/Bi/Ni)
  • Terminal Position
    BOTTOM
  • Memory Organization
    2GX32
  • Number of Functions
    1
  • Number of Terminals
    200
  • Terminal Pitch (mm)
    0.65
  • Access Time-Max (ns)
    3.5
  • Number of Words Code
    2G
  • Memory Density (bits)
    68719476736
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    9.5
  • Supply Voltage-Max (V)
    1.17
  • Supply Voltage-Min (V)
    1.06
  • Supply Voltage-Nom (V)
    1.1
  • Number of Words (words)
    2147483648
  • Sequential Burst Length
    16,32
  • Standby Current-Max (A)
    0.0062
  • Supply Current-Max (mA)
    205
  • Interleaved Burst Length
    16,32
  • Package Equivalence Code
    BGA200,12X22,25
  • Clock Frequency-Max (MHz)
    2133
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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MT53E2G32D4NQ-046WT:A