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MT53E256M16D1DS-046AAT:B

Micron Technology

Micron Technology MT53E256M16D1DS-046AAT:B
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.36
  • SB Code
    8542.32.00.23
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    10
  • Access Mode
    MULTI BANK PAGE BURST
  • Length (mm)
    14.5
  • JESD-30 Code
    R-PBGA-B200
  • Memory Width
    16
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    LPDDR4 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Number of Ports
    1
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    BOTTOM
  • Memory Organization
    256MX16
  • Number of Functions
    1
  • Number of Terminals
    200
  • Terminal Pitch (mm)
    0.8
  • Number of Words Code
    256M
  • Memory Density (bits)
    4294967296
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    0.8
  • Supply Voltage-Max (V)
    1.17
  • Supply Voltage-Min (V)
    1.06
  • Supply Voltage-Nom (V)
    1.1
  • Number of Words (words)
    268435456
  • Sequential Burst Length
    16,32
  • Interleaved Burst Length
    16,32
  • Package Equivalence Code
    BGA200,12X22,32/25
  • Clock Frequency-Max (MHz)
    2133
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    105
  • Operating Temperature-Min (Cel)
    -40
  • Screening Level / Reference Standard
    AEC-Q100
  • Time@Peak Reflow Temperature-Max (s)
    30

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MT53E256M16D1DS-046AAT:B