MT4VDDT864HY-335
Micron Technology
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR DRAM Module, 8MX64, 0.75ns, CMOS, PDMA200
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N200
- Memory Width64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles4096
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization8MX64
- Number of Terminals200
- Terminal Pitch (mm)0.6
- Access Time-Max (ns)0.75
- Number of Words Code8M
- Memory Density (bits)536870912
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)2.5
- Number of Words (words)8388608
- Package Equivalence CodeDIMM200,24
- Clock Frequency-Max (MHz)166
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MT4VDDT864HY-335