MT4VDDT1632UY-6
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR DRAM Module, 16MX32, 0.7ns, CMOS, PDMA100
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N100
- Memory Width32
- Organization16MX32
- Package CodeDIMM
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density536870912 bit
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles4096
- Terminal Pitch1.27 mm
- Access Time-Max0.7 ns
- Number of Words16777216 words
- Terminal FinishMATTE TIN
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max1420 mA
- Number of Terminals100
- Standby Current-Max0.012 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM100
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)167 MHz
- Moisture Sensitivity Level1
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MT4VDDT1632UY-6