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MT49H64M9CBM-18:B

Micron Technology

Micron Technology MT49H64M9CBM-18:B
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • Width
    11 mm
  • Length
    18.5 mm
  • I/O Type
    SEPARATE
  • Technology
    CMOS
  • Access Mode
    MULTI BANK PAGE BURST
  • JESD-30 Code
    R-PBGA-B144
  • Memory Width
    9
  • Organization
    64MX9
  • Package Code
    TBGA
  • JESD-609 Code
    e1
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    603979776 bit
  • Memory IC Type
    DDR DRAM
  • Operating Mode
    SYNCHRONOUS
  • Terminal Pitch
    1 mm
  • Access Time-Max
    15 ns
  • Number of Ports
    1
  • Number of Words
    67108864 words
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Seated Height-Max
    1.2 mm
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO REFRESH
  • Supply Current-Max
    830 mA
  • Number of Functions
    1
  • Number of Terminals
    144
  • Standby Current-Max
    0.005 Amp
  • Number of Words Code
    64M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    2,4,8
  • Interleaved Burst Length
    2,4,8
  • Package Equivalence Code
    BGA144,12X18,40/32
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    1.9 V
  • Supply Voltage-Min (Vsup)
    1.7 V
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • Clock Frequency-Max (fCLK)
    533 MHz

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MT49H64M9CBM-18:B