MT49H32M18CHT-25E
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR DRAM, 32MX18, 0.2ns, CMOS, PBGA144
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width11 mm
- Length18.5 mm
- I/O TypeSEPARATE
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B144
- Memory Width18
- Organization32MX18
- Package CodeTBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density603979776 bit
- Memory IC TypeDDR DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max0.2 ns
- Number of Ports1
- Number of Words33554432 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO REFRESH
- Supply Current-Max980 mA
- Number of Functions1
- Number of Terminals144
- Standby Current-Max0.053 Amp
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeBGA144,12X18,40/32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)400 MHz
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MT49H32M18CHT-25E