MT47H512M8THM-37E:A
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR2 DRAM, 512MX8, CMOS, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width12 mm
- Length14 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Organization512MX8
- Package CodeLFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density4294967296 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words536870912 words
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Seated Height-Max1.35 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Supply Current-Max308 mA
- Number of Functions1
- Number of Terminals63
- Standby Current-Max0.016 Amp
- Number of Words Code512M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA63,9X11,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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MT47H512M8THM-37E:A