MT47H256M8THN-3:G
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR2 DRAM, 128MX8, CMOS, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)9
- Access ModeDUAL BANK PAGE BURST
- Length (mm)11.5
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization128MX8
- Number of Functions1
- Number of Terminals63
- Terminal Pitch (mm)0.8
- Number of Words Code128M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)134217728
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)30
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MT47H256M8THN-3:G