MT47H256M8-3:G
Micron Technology
- Lifecycle statusDiscontinued
- DescriptionDDR2 DRAM, 128MX8, CMOS, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Package CodeBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Memory Organization128MX8
- Number of Functions1
- Number of Terminals63
- Number of Words Code128M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)134217728
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
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MT47H256M8-3:G