MT47H128M4GB-3E:B
Micron Technology
- Lifecycle statusDiscontinued
- DescriptionDDR2 DRAM, 128MX4, 0.45ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Width10 mm
- Length12 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B60
- Memory Width4
- Organization128MX4
- Package CodeTFBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.45 ns
- Number of Ports1
- Number of Words134217728 words
- Terminal FinishTIN LEAD SILVER
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max240 mA
- Number of Functions1
- Number of Terminals60
- Standby Current-Max0.007 Amp
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA60,9X11,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)333 MHz
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MT47H128M4GB-3E:B